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NTD40N03R
ELECTRICAL CHARACTERISTICS (T J = 25 ° C unless otherwise specified)
Characteristics
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain ? to ? Source Breakdown Voltage (Note 3)
(V GS = 0 Vdc, I D = 250 m Adc)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(V DS = 20 Vdc, V GS = 0 Vdc)
(V DS = 20 Vdc, V GS = 0 Vdc, T J = 150 ° C)
Gate ? Body Leakage Current
(V GS = ± 20 Vdc, V DS = 0 Vdc)
V(br) DSS
I DSS
I GSS
25
?
?
?
?
28
?
?
?
?
?
?
1.0
10
± 100
Vdc
mV/ ° C
m Adc
nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(V DS = V GS , I D = 250 m Adc)
Threshold Temperature Coefficient (Negative)
Static Drain ? to ? Source On ? Resistance (Note 3)
(V GS = 4.5 Vdc, I D = 10 Adc)
(V GS = 10 Vdc, I D = 10 Adc)
Forward Transconductance (Note 3)
(V DS = 10 Vdc, I D = 10 Adc)
V GS(th)
R DS(on)
g FS
1.0
?
?
?
?
1.7
?
18.6
12.6
20
2.0
?
23
16.5
?
Vdc
mV/ ° C
m W
Mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
C iss
?
584
?
pF
Output Capacitance
Transfer Capacitance
(V DS = 20 Vdc, V GS = 0 V, f = 1 MHz)
C oss
C rss
?
?
254
99
?
?
SWITCHING CHARACTERISTICS (Note 4)
Turn ? On Delay Time
t d(on)
?
4.5
?
ns
Rise Time
Turn ? Off Delay Time
Fall Time
(V GS = 10 Vdc, V DD = 10 Vdc,
I D = 10 Adc, R G = 3 W )
t r
t d(off)
t f
?
?
?
19.5
16.7
3.5
?
?
?
Gate Charge
(V GS = 4.5 Vdc, I D = 10 Adc,
V DS = 10 Vdc) (Note 3)
Q T
Q 1
Q 2
?
?
?
5.78
2.1
2.5
?
?
?
nC
SOURCE ? DRAIN DIODE CHARACTERISTICS
Forward On ? Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(I S = 10 Adc, V GS = 0 Vdc) (Note 3)
(I S = 10 Adc, V GS = 0 Vdc, T J = 125 ° C)
(I S = 10 Adc, V GS = 0 Vdc,
dI S /dt = 100 A/ m s) (Note 3)
V SD
t rr
t a
t b
Q RR
?
?
?
?
?
?
0.85
0.71
20.4
8.25
12.1
0.007
1.2
?
?
?
?
?
Vdc
ns
m C
3. Pulse Test: Pulse Width ≤ 300 m s, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
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